| PART |
Description |
Maker |
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIA1314A-2P |
13.0-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1414-4P |
14.0-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1314-8P |
13.75-14.5GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIA1414-8P |
14.0-14.5GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
| MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NJG1556KB2 |
1.5GHz/1.9GHz Mixer GaAs MMIC(用于1.5GHz/1.9GHz频带数字移动电话的砷化镓单片微波集成电路混频
|
New Japan Radio Co., Ltd.
|
| NJG1552F-L5 NJG1552F-L3 NJG1552F-L7 NJG1552F-C8 NJ |
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
